Description
The DFB laser is a hermetic sealed device with the photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.5Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coatingon the rear facet. Gold bonding pads are provided on both the p and n sides. A hexadecimal number appears on both sides of the chip for identification purposes. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in and other multi-temperature, CW and dynamic tests.
Features
Low threshold current
High output power
TO-56 package with flat window, 2mm ball
Near Circular beam pattern
Long history of proven field reliability
Very high reliability design, including
High quality MOCVD epitaxy
Patented low-penetration, ohmic
p-contact design
Laser qualified as per intent of Telcordia
GR-468
Patented hermetic facet coatings
Operating temperature can be extended to
-5 oC to +75 o C
Applications
Supports performance up to 2.5 Gb/sec bit
rate, -5 o C t o 7 5 o C operating temperature
range up to 40km
LR1 SONET/ SDH OC-3/ STM-1, OC-12/
STM-4, OC-48/ STM-16
Gigabit Ethernet
Fibre Channel
Passive Optical Networks
Analog and CATV
Electro-Optical Characteristics
Parameters tested at 25o C, data for extended temperature range is based on product characterization results for reference only
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operations sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Handling Precautions:
Radiation from the laser can be dangerous, avoid direct eye contact with the laser. Using an infrared camera or IR viewer to observe the laser light
Semiconductor lasers are sensitive to electro-static damage. The module shall be packed with ESD proof material for carry and shipment. The working environment, such as working bench, soldering iron, and workers shall be carefully grounded.
Electrical and Optical overstress (ESD/EOS) Information
Results of ESD testing indicate that this is a Class I laser with an ESD withstand voltage of 500V.
Switching transients can cause electrical overstress (EOS) damage in a chip. EOS may result from improper ESD handling, improper power sequencing, a faulty power supply oran intermittent connection.
Proper turn-on sequence:
a.All ground connections
b.Most negative supply
c.All remaining connections
d.Reverse order to turn-off.
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